发明名称 |
Copper wiring forming method with Ru liner and Cu alloy fill |
摘要 |
Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring. |
申请公布号 |
US9406557(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201414316251 |
申请日期 |
2014.06.26 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Yokoyama Osamu;Han Cheonsoo;Sakuma Takashi;Yasumuro Chiaki;Hirasawa Tatsuo;Ishizaka Tadahiro;Suzuki Kenji |
分类号 |
H01L21/768;H01L23/532;H01L21/288 |
主分类号 |
H01L21/768 |
代理机构 |
Nath, Goldberg & Meyer |
代理人 |
Nath, Goldberg & Meyer ;Meyer Jerald L. |
主权项 |
1. A method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate, the method comprising:
forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film directly on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; andforming a dielectric film on the Cu wiring,
wherein the forming the Cu alloy film includes: supplying a plasma-generating gas into a processing chamber in which the substrate is received to generate plasma; scattering grains from a target made of the same material as that of the Cu alloy film; allowing the grains to pass through the plasma for ionization of the grains; and applying a bias power such that the ionized grains are attracted onto the substrate. |
地址 |
Tokyo JP |