| 摘要 |
<p>A high-resolution lithographic method of making monolithic integrated circuits, being of a type wherein a silicon wafer is exposed to an electromagnetic radiation of predetermined wavelength following the interposition of a light mask, to photochemically generate, in first areas of the film, acid compounds from light-sensitive compounds, provides for selective removal of said first areas of the film following neutralization of the acid compounds, exposing second areas of the film, incorporating silicon to the last mentioned areas, developing by means of oxygen plasma to form, on the second areas of the film, a protective layer of silicon dioxide and selectively removing the remaining areas. This method enables the definition with high yield on the wafer of structures smaller than one micron.</p> |
