THIN-FILM TRANSISTOR MATRIX DEVICE AND ITS PRODUCTION

摘要

PURPOSE: To provide a thin-film transistor matrix device which can be produced at a high yield with decreased fluctuations in characteristics without the occurrence of shorting defects despite of application of electrical stresses, such as electrostatic charges, in a production stage and a process for producing such device. CONSTITUTION: Gate bus lines 14 for commonly connecting the gates of thin-film transistors(TFTs) and drain bus lines 16 for commonly connecting the TFTs are extended on a transparent insulating substrate 10. External terminals 20 facing the ends of the gate bus lines 14 are formed at the edges of this transparent insulating substrate 10 and external terminals 30 are formed thereon to face the ends of the drain bus lines 16. Connecting wirings 24 for gates for commonly connecting the gate bus lines 14 and connecting wirings 34 for drains for commonly connecting the drain bus lines 16 are formed in the regions on the side inner than these external terminals 20, 30.