| 摘要 |
A plasma confinement ring comprising a first generally planar surface; a second generally planar surface; an aperture extending between the first and second surfaces, the aperture including an annular surface, and a curved surface extending between the annular surface and the first planar surface. A method of manufacturing a plasma reactor for processing a semiconductor wafer, the method comprising providing a reactor chamber and an electrostatic chuck in the reactor chamber for supporting a semiconductor wafer; providing a plasma confinement ring having first and second opposite surfaces, an aperture extending between the first and second opposite surfaces, the aperture being defined by an annular surface, an annular corner being defined at the intersection of the annular surface and the first surface; enhancing adhesion of condensed polymer byproducts by rounding the annular corner to provide a gradual transition from the annular surface to the first surface and roughening the rounded corner to increase surface area; and supporting the ring in the chamber.
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