| 发明名称 |
Method of fabricating a barrier layer |
| 摘要 |
A method of forming a barrier layer is disclosed. The barrier layer is formed on the upper surface of the tungsten plug. The method of forming the barrier layer is mainly a nitridation reaction. The nitridation reaction makes use of NH3 plasma, N2 plasma and N+implantation.
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| 申请公布号 |
US6008118(A) |
申请公布日期 |
1999.12.28 |
| 申请号 |
US19980059310 |
申请日期 |
1998.04.13 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
YEH, WEN-KUAN;LIN, TONY;HUANG, HENG-SHENG |
| 分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
| 代理机构 |
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