发明名称 |
Method for creating microstructures |
摘要 |
Microstructures are ion milled in an existing layer by a process including forming a metal mask then milling in the presence of a reactive gas which combines with the metal to form a surface that mills at a lower rate than the metal alone. The metal mask is formed through wet etching, with a wet etch stop film preventing the existing layer from being attacked by the wet etchant. In a preferred embodiment, cobalt-zirconium-tantalum (CZT) is milled to form top poles for tape write heads. A gold. (Au) wet etch stop film is first applied to the CZT layer. Next, a titanium (Ti) layer is deposited. A photoresist mask is formed and the Ti is wet etched, producing a metal mask. Milling with nitrogen (N2) in the presence of argon (Ar) ions causes the exposed layer of Ti to form titanium nitride (TiN), which mills at a slower rate than Ti.
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申请公布号 |
US6024884(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19980042682 |
申请日期 |
1998.03.12 |
申请人 |
STORAGE TECHNOLOGY CORPORATION |
发明人 |
BRYANT, STEVEN R.;HERRERA, STEVEN C. |
分类号 |
C23F1/02;G11B5/187;G11B5/31;(IPC1-7):B44C1/22;C23F1/00 |
主分类号 |
C23F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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