| 摘要 |
PROBLEM TO BE SOLVED: To increase the luminance and suppress a change in luminance with the passage of time by forming a reflection layer made of a metal nitride on a face of a sapphire substrate opposite to a face formed with a III nitride compound semiconductor layer. SOLUTION: On a substrate 11 (sapphire), a buffer layer 12 (AlN, 100 Å), an n-clad layer 13 (n-GaN: Si, 4 μm), a light emitting layer 14 (a superlattice structure), a p-clad layer 15 (p-GaN: Mg, 0.3 μm), and a translucent electrode 17 (a thin film including gold) are formed in order. After forming the p-clad layer 15, a TiN reflection layer 16 (0.3 μm) is formed on a face of the substrate 11 opposite to a face formed with the stacked semiconductor layers, A reflection factor of the reflection layer made of a metal nitride scarecely changes with the passage of time. The light generated in the light emitting layer 14 is taken out through the translucent electrode 17. Part of the light which is headed toward the substrate 11 is reflected on the surface of the reflection layer 16 to be changed into the light headed toward the translucent electrode 17. Accordingly, the luminance of a light emitting element can be increased and a change in luminance with the passage of time can be suppressed. |
