发明名称 Semiconductor device manufacturing method and semiconductor device
摘要 In a semiconductor device manufacturing method for forming a rerouting layer, which has wirings for leading electrically electrode terminals and bonding pads, on a major surface side on which the electrode terminals of a semiconductor element are provided, the wirings are formed thinner than the bonding pads.
申请公布号 US2003089868(A1) 申请公布日期 2003.05.15
申请号 US20020287636 申请日期 2002.11.05
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 ITO DAISUKE;KAZAMA TAKUYA
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/485;H01L23/525;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):F16K35/00 主分类号 H01L23/52
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