发明名称 Optoelectronic material and device application, and method for manufacturing optoelectronic material
摘要 <p>An optoelectronic material, device applications, and methods for manufacturing the optoelectronic material are provided to make it possible to obtain stable characteristics without deterioration of luminescence over time in the atmosphere. The optoelectronic material is composed of a porous silicon the surface of which is nitrided to form a silicon nitride layer thereon. This allows a stable electroluminescence to be obtained, without oxidation of the surface of the porous silicon.</p>
申请公布号 EP1132976(A2) 申请公布日期 2001.09.12
申请号 EP20010103836 申请日期 2001.02.16
申请人 MATSUSHITA RESEARCH INSTITUTE TOKYO, INC. 发明人 YAMADA, YUKA;YOSHIDA, TAKEHITO;SUZUKI, NOBUYASU;MAKINO, TOSHIHARU;ARAI, TOSHIHIRO;KIMOTO, KAZUHIKO
分类号 H05B33/14;B23K26/00;B23K26/12;B23K101/40;B82Y20/00;H01L21/203;H01L31/0248;H01L31/028;H01L31/09;H01L31/10;H01L33/34;H05B33/12;(IPC1-7):H01L33/00 主分类号 H05B33/14
代理机构 代理人
主权项
地址