| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate capable of causing a nitride semiconductor layer having proper crystallinity to grow. SOLUTION: An n-GaN off substrate 1 comprises an off surface tilted 1-20 deg.C from (0001) plane. Here, the tilt direction of the off surface is in the direction ±7 deg.C from <11-20> direction. When a nitride semiconductor layer is grown on the n-GaN off substrate 1 comprising the off surface, the crystal growth of the nitride semiconductor layer takes place mainly in step flow mode. Thus, using the n-GaN off substrate 1, a nitride semiconductor layer of proper crystallinity can be provided. |
