| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics of an optical semiconductor element formed of GaAs semiconductor. SOLUTION: This optical semiconductor element includes an N-type GaAsP semiconductor layer 5, a P-type GaAsP semiconductor layer 5a, formed on the layer 5, a first electrode 21 formed to an N-type GaAs semiconductor substrate 1, a ZnO layer 15 (second electrode), which is formed to the P-type GaAsP semiconductor layer 5a and contains group III B, Al, Ga or In of 2-8 at% as dopant, and further an upper part electrode 17 formed in a part region on the layer 15. |
