发明名称 Pattern defect inspection method and apparatus thereof
摘要 In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
申请公布号 US2007085005(A1) 申请公布日期 2007.04.19
申请号 US20060449650 申请日期 2006.06.09
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 HASEGAWA MASAKI;MAKINO HIROSHI;KOYAMA HIKARU;CHENG ZHAOHUI;MURAKOSHI HISAYA
分类号 G21K7/00 主分类号 G21K7/00
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