发明名称 |
CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR POLISHING POLY-SILICON FILM |
摘要 |
A chemical mechanical polishing slurry composition for polishing poly-silicon films is provided to solve a dishing problem and have excellent polishing uniformity and high selectivity. The chemical mechanical polishing slurry composition for polishing poly-silicon films comprises (a) a metal oxide, (b) a quaternary ammonium base compound, and (c) an ionic polymer. The ionic polymer is contained in an amount of 0.001-1wt% based on the total slurry composition. The ionic polymer is at least one selected from polyacrylic acid, poly(acrylic acidco-maleic acid), and poly(acylamide-co-acrylic acid).
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申请公布号 |
KR20070075075(A) |
申请公布日期 |
2007.07.18 |
申请号 |
KR20060003406 |
申请日期 |
2006.01.12 |
申请人 |
CHEIL INDUSTRIES INC. |
发明人 |
CHOI, WON YOUNG;LEE, IN KYUNG;CHOUNG, JAE HOON;LEE, TAE YOUNG |
分类号 |
C09K3/14 |
主分类号 |
C09K3/14 |
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