发明名称 CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR POLISHING POLY-SILICON FILM
摘要 A chemical mechanical polishing slurry composition for polishing poly-silicon films is provided to solve a dishing problem and have excellent polishing uniformity and high selectivity. The chemical mechanical polishing slurry composition for polishing poly-silicon films comprises (a) a metal oxide, (b) a quaternary ammonium base compound, and (c) an ionic polymer. The ionic polymer is contained in an amount of 0.001-1wt% based on the total slurry composition. The ionic polymer is at least one selected from polyacrylic acid, poly(acrylic acidco-maleic acid), and poly(acylamide-co-acrylic acid).
申请公布号 KR20070075075(A) 申请公布日期 2007.07.18
申请号 KR20060003406 申请日期 2006.01.12
申请人 CHEIL INDUSTRIES INC. 发明人 CHOI, WON YOUNG;LEE, IN KYUNG;CHOUNG, JAE HOON;LEE, TAE YOUNG
分类号 C09K3/14 主分类号 C09K3/14
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