METHOD FOR DICING SEMICONDUCTOR WAFER USING TRENCH ALONG SCRIBE LANE

摘要

A method for dicing a semiconductor wafer using a trench in a scribe lane is provided to separate semiconductor dies mostly or completely in polishing the back surface of a semiconductor wafer by previously a trench in the semiconductor wafer along the scribe lane. A trench(11) is formed in a semiconductor wafer along a scribe lane by which a semiconductor die(10') is separated. Protection tape is attached to the upper surface of the semiconductor wafer having the trench. The back surface of the semiconductor wafer to which the protection tape is polished to be a predetermined thickness required for a package. The polished semiconductor wafer is placed on a dicing unit to which dicing tape(40) is attached. The dicing tape on the dicing unit is elongated to separate the semiconductor die. The process for forming the trench includes the following steps. A photoresist layer is formed on the semiconductor wafer. The photoresist layer is patterned to form a photoresist pattern exposing the scribe lane. The semiconductor wafer is etched by using the photoresist pattern as a mask to form a trench of a predetermined depth along the scribe lane.