| 摘要 |
One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a silicon substrate using a Local Oxidation of Silicon (LOCOS) process, and a silicon membrane is bonded to the substrate. The membrane has a thickness less than 2000 Å and a mechanical strain greater than 0.5% where the membrane is bonded to the substrate in the number of recesses. Other aspects are provided herein.
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