发明名称 |
Semiconductor memory device with high permeability lines interposed between adjacent transmission lines |
摘要 |
A memory device is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A number of high permeability metal lines are formed on the first layer of insulating material. The number of high permeability metal lines includes composite hexaferrite films. A number of transmission lines is formed on the first layer of insulating material and between and parallel with the number of high permeability metal lines. A second layer of insulating material is formed on the transmission lines and the high permeability metal lines. The structure for transmission line operation includes a second layer of electrically conductive material on the second layer of insulating material.
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申请公布号 |
US7483286(B2) |
申请公布日期 |
2009.01.27 |
申请号 |
US20060494081 |
申请日期 |
2006.07.27 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FORBES LEONARD;AHN KIE Y.;AKRAM SALMAN |
分类号 |
G11C5/08;G11C7/18;H01L23/522;H01L29/41 |
主分类号 |
G11C5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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