| 摘要 |
The present invention relates to a method for manufacturing silicon carbide having excellent mechanical strength and durability, and the silicon carbide for a semiconductor process manufactured by the same capable of controlling a composition of reactive gases with an optimal rate to have a desired level of an electric resistance value. The present invention maintains high mechanical strength of the silicon carbide in chemical vapor deposition, and effectively controls the electric resistance. The present invention is provided to maintain the low concentration of impurities, and a proper chemical vapor deposition speed, thereby effectively manufacturing the silicon carbide. The silicon carbide manufactured by the method for controlling the resistance is provided to maintain the low concentration of nitrogen ion in the silicon carbide, thereby maintaining high thermal resistance, and high density; and maintaining the high mechanical strength (whip strength, fine strength, etc.); and providing an excellent discharge processing feature by improving electrical conductivity. |
