EMBEDDED PHASE CHANGE MEMORY DEVICES AND RELATED METHODS

摘要

A method for making an integrated circuit (IC) including embedded phase change memory (PCM) may include forming an array of heating elements above a substrate including processing circuitry thereon, and forming a respective PCM chalcogenide glass layer above each heating element. This may be done by forming a tellurium-rich, germanium-antimony-tellurium (GST) layer above the heating element, and forming a germanium-rich GST layer above the tellurium-rich GST layer. In another embodiment, the method may include forming the PCM glass layers to have a nitrogen concentration doping profile that increase in a direction upward from the heating element.

主权项

1. A method for making an integrated circuit (IC) including embedded phase change memory (PCM), the method comprising:
forming an array of heating elements above a substrate including processing circuitry thereon; and forming a respective PCM chalcogenide glass layer above each heating element by
forming a tellurium-rich, germanium-antimony-tellurium (GST) layer above the heating element, andforming a germanium-rich GST layer above the tellurium-rich GST layer.