SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes a magnetic tunnel junction (MTJ) element, an electrode layer pattern formed over the MTJ element, a protective layer for protecting the MTJ element and the electrode layer pattern, wherein the protective layer is arranged to expose a first area of the electrode layer pattern, a first insulation layer formed over the protective layer and arranged to form a first hole exposing the first area of the electrode layer pattern, a second insulation layer formed over the first insulation layer and arranged to form a second hole over the first hole, wherein the second hole has a larger width than the first hole, and an overhang pattern protruding from a sidewall of the first hole and suitable for preventing the protective layer on a sidewall of the MTJ element.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a magnetic tunneling junction (MTJ) element and an electrode layer pattern over a substrate; forming a protective layer to protect the MTJ element and the electrode layer pattern; forming at least one insulation layer over the protective layer; forming a first hole by selectively removing the at least one insulation layer; forming a second hole exposing the electrode layer pattern by selectively removing the at least one insulation layer exposed at the bottom of the first hole; and forming a conductive layer pattern to be electrically coupled to the electrode layer pattern exposed through the second hole.