LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

摘要

A light emitting diode includes an n-type semiconductor layer disposed on a substrate; a p-type semiconductor layer disposed on a portion of the n-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer and generating light through recombination of electrons and holes; an ohmic contact layer disposed on the p-type semiconductor layer and including an indium tin oxide (ITO) layer doped with a metal, a transparent conductive layer disposed on the ohmic contact layer to a different thickness than the ohmic contact layer and including an undoped ITO layer, and a reflective layer disposed on the transparent conductive layer and including an oxide layer. Accordingly, the light emitting diode exhibits excellent current-voltage characteristics through improvement in reliability and electrical conductivity of the ohmic contact layer while improving luminous efficacy through the reflective layer formed of an oxide.

主权项

1. A light emitting diode comprising:
a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers, and having at least one hole formed through the second conductive type semiconductor layer and the active layer to expose the first conductive type semiconductor layer therethrough; a first electrode forming ohmic contact with the first conductive type semiconductor layer through the at least one hole of the light emitting structure; a current spreading layer disposed on the second conductive type semiconductor layer and forming ohmic contact with the second conductive type semiconductor layer, the current spreading layer including a lower current spreading layer and an upper current spreading layer disposed on the lower current spreading layer; a second electrode disposed on the current spreading layer; an insulation layer covering the light emitting structure and the current spreading layer, and including openings partially exposing the first and second electrodes; and a first pad and a second pad disposed on the insulation layer and electrically connected to the first and second electrodes, respectively, wherein the upper current spreading layer and the lower current spreading layer have different electrical conductivities, and wherein the at least one hole includes a first hole disposed under the first pad and a second hole including a portion disposed under the first pad and a portion disposed under a gap between the first pad and the second pad.