FINFET TRANSISTOR WITH FIN BACK BIASING

摘要

A FinFET having fin back biasing and methods of forming the same are disclosed. The FinFET includes a substrate and a fin over the substrate. The fin includes a source region, a drain region, a channel region, and a biasing region. The source and drain regions sandwich the channel region. The channel region and the biasing region sandwich one of the source and drain regions. The FinFET further includes a gate over the substrate. The gate engages the fin adjacent to the channel region, thereby forming a field effect transistor (FET). The biasing region is configured to bias the FET body effect when a voltage is applied to the biasing region. From a cross sectional view, the source region and the biasing region each have a substantially rectangular profile, wherein the source region is taller and wider than the biasing region.

主权项

1. A method of forming a semiconductor device, comprising:
forming a fin over a substrate, the fin having a source region, a drain region, a channel region, and a first region, wherein the source and drain regions sandwich the channel region, and the first region and the channel region sandwich one of the source and drain regions; trimming the first region, resulting in a trimmed first region; and forming a gate over the substrate, the gate engaging the fin adjacent to the channel region.