发明名称 |
MANUFACTURING METHOD FOR SOLAR BATTERY SUBSTRATE, AND SOLAR BATTERY SUBSTRATE |
摘要 |
This manufacturing method for a solar battery substrate comprising single-crystal silicon is characterized by comprising: a step for producing a silicon single-crystal ingot; a step for cutting out a silicon substrate from the silicon single-crystal ingot; and a step for low-temperature heat-treating the silicon substrate at a temperature of at least 800°C but less than 1200°C, wherein before the low-temperature heat-treatment, the silicon single-crystal ingot or the silicon substrate is high-temperature heat-treated for at least 30 seconds at a temperature of at least 1200°C. As a result, a manufacturing method for a solar battery substrate with which it is possible to prevent a reduction in the lifetime of the substrate, even if the oxygen concentration of the substrate is high, is provided. |
申请公布号 |
WO2016110891(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
WO2015JP05846 |
申请日期 |
2015.11.25 |
申请人 |
SHIN-ETSU CHEMICAL CO.,LTD. |
发明人 |
OTSUKA, HIROYUKI;SHIRAI, SHOZO |
分类号 |
H01L31/18;H01L21/22;H01L21/316;H01L21/324;H01L31/068 |
主分类号 |
H01L31/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|