| 摘要 |
It is an object of the present invention to provide an arc ion plating method and a target used therein, capable of obtaining a uniform film thickness distribution substantially throughout the overall length of a work and also capable of improving the yield of the target material and reducing the manufacturing cost of the target. Within a vacuum chamber 1 there are disposed a target 3 and works, the target 3 being dividable into at least both longitudinal end portions 31, 32 and a central portion 33 other than the both longitudinal end portions. When forming a film, the position of an arc spot on the target surface is controlled in such a manner that the consuming speed of both longitudinal end portions 31, 32 becomes higher than the consuming speed of the central portion 33. Until arrival of the central portion 33 of the target 3 at a consumption limit, at least only one of both longitudinal end portions 31, 32 is replaced upon arrival of the end portion at the consumption limit, and film formation is continued. |
