FINFETS WITH WRAP-AROUND SILICIDE AND METHOD FORMING THE SAME

摘要

A device comprises isolation regions extending into a semiconductor substrate, with a substrate strip between opposite portions of the isolation regions having a first width. A source / drain region has a portion overlapping the substrate strip, wherein an upper portion of the source / drain region has a second width greater than the first width. The upper portion of the source / drain region has substantially vertical sidewalls. A source / drain silicide region has inner sidewalls contacting the vertical sidewalls of the source / drain region.