| 发明名称 | Pattern forming method | ||
| 摘要 | In one embodiment, a pattern forming method includes forming a first film on a substrate that includes a convex portion and a concave portion so as to expose an upper end of the convex portion. The method further includes forming a photosensitive second film on the first film so as to cover the upper end of the convex portion. The method further includes exposing the second film to light. The method further includes developing the second film with a development liquid to form a second pattern of the second film. The method further includes dissolving and removing the first film exposed from the second pattern with a liquid to form a first pattern of the first film. | ||
| 申请公布号 | US9437477(B1) | 申请公布日期 | 2016.09.06 |
| 申请号 | US201514844152 | 申请日期 | 2015.09.03 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Aida Makoto |
| 分类号 | H01L21/033;H01L21/768;H01L21/311;H01L21/266;G03F7/00;G03F7/20;G03F7/32 | 主分类号 | H01L21/033 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A pattern forming method comprising: forming a first film on a substrate that includes a convex portion and a concave portion so as to expose an upper end of the convex portion; forming a photosensitive second film on the first film so as to cover the upper end of the convex portion; exposing the second film to light; developing the second film with a development liquid to form a second pattern of the second film; and dissolving and removing the first film exposed from the second pattern with a liquid to form a first pattern of the first film. | ||
| 地址 | Minato-ku JP | ||