| 摘要 |
PURPOSE:To prevent the generation of dust from the impressions in a distorted part at the times of heat treatment and hydrofluoric acid treatment and to prevent an effect from inflicting on the yield of an element and element characteristics by a method wherein one containing at least 15% of polishing powder of a particle diameter of 10mum or less is used as a grinding fluid. CONSTITUTION:In case an Si substrate is contrived so as to have a gettering effect by a sandblasting method, a grinding fluid containing at least 15% of polishing powder of a particle diameter of 10mum or less is used and the density of impressions is set in 10<4> piece/cm<2> or less. Thereby, the generation of dust in the latter process can be inhibited while the substrate has the gettering effect. As a result, element characteristics are improved and the yield of a semiconductor element is improved.
|
