发明名称 Process for production of a semiconductor device.
摘要 <p>In the production of semiconductor devices, a pattern-wise exposed resist coating is developed with a developer to form a resist pattern corresponding to the pattern of exposure radiation on an article to be fabricated, the development being carried out with a developer consisting of one or more organic solvents, in at least two stages and in each stage of the development, the development is interrupted when a substantial permeation of the developer of a surface portion of the pattern-forming area of the resist pattern in which the resist pattern remains is completed, and the developed resist coating is dried between this stage and the following development stages.</p>
申请公布号 EP0419073(A2) 申请公布日期 1991.03.27
申请号 EP19900309551 申请日期 1990.08.31
申请人 FUJITSU LIMITED 发明人 MARUYAMA, TAKASHI;CHIJIMATSU, TATSUO;KOBAYASHI, KOICHI;YANO, KEIKO, ETERUNAMEZON MIZOGUCHI 203;KANATA, HIROYUKI, FUJITSU NAKAHARA HAUSU W-8
分类号 G03F7/30;H01L21/027;H01L21/30 主分类号 G03F7/30
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