发明名称 |
Process for production of a semiconductor device. |
摘要 |
<p>In the production of semiconductor devices, a pattern-wise exposed resist coating is developed with a developer to form a resist pattern corresponding to the pattern of exposure radiation on an article to be fabricated, the development being carried out with a developer consisting of one or more organic solvents, in at least two stages and in each stage of the development, the development is interrupted when a substantial permeation of the developer of a surface portion of the pattern-forming area of the resist pattern in which the resist pattern remains is completed, and the developed resist coating is dried between this stage and the following development stages.</p> |
申请公布号 |
EP0419073(A2) |
申请公布日期 |
1991.03.27 |
申请号 |
EP19900309551 |
申请日期 |
1990.08.31 |
申请人 |
FUJITSU LIMITED |
发明人 |
MARUYAMA, TAKASHI;CHIJIMATSU, TATSUO;KOBAYASHI, KOICHI;YANO, KEIKO, ETERUNAMEZON MIZOGUCHI 203;KANATA, HIROYUKI, FUJITSU NAKAHARA HAUSU W-8 |
分类号 |
G03F7/30;H01L21/027;H01L21/30 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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