发明名称 |
Isotype heterofunction photodiode. |
摘要 |
<p>In this invention, there is disclosed a new photodiode which comprises a semimetal/semiconductor junction. Distortion of the bands associated with this type of junction result in current flow when an electron hole pair is formed by, for example, a photon impinging upon the junction. The photodiode operates in the photovoltaic mode. However, rather than relying on impurity doping to fabricate a p-n junction, the semimetallic nature of HgTe and its large conduction band offsets with Hg1-xCdx Te are used to create a rectifying Schottky like structure.</p> |
申请公布号 |
EP0419025(A1) |
申请公布日期 |
1991.03.27 |
申请号 |
EP19900308748 |
申请日期 |
1990.08.09 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
AUSTIN, RICHARD F.;FELDMAN, ROBERT D.;SULHOFFF, JAMES W.;ZYSKIND, JOHN L. |
分类号 |
H01L31/10;H01L31/0296;H01L31/101;H01L31/108 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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