发明名称 |
SEMICONDUCTOR SUPER LATTICE HETEROSTRUCTURE FABRICATION METHODS, STRUCTURES AND DEVICES |
摘要 |
A novel quantum well semiconductor structure is described wherein the quantum well is formed by growing a thin (?500.ANG.) epitaxial layer on a patterned (e.g. grooved) nonplanar substrate so as to achieve thickness variations along the quantum well and hence laterally varying superlattice periodicity and QW depth. Using this structure one can achieve lateral carrier confinement and real refractive index waveguiding. Index guided GaAs/A/GaAs lasers are described. |
申请公布号 |
CA1315865(C) |
申请公布日期 |
1993.04.06 |
申请号 |
CA19890589245 |
申请日期 |
1989.01.26 |
申请人 |
BELL COMMUNICATIONS RESEARCH, INC. |
发明人 |
KAPON, ELYAHOU |
分类号 |
H01L21/20;H01L29/12;H01L29/15;H01L29/66;H01S5/32;H01S5/323;H01S5/34;H01S5/343;H01S5/40 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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