| 摘要 |
An integrated circuit dynamic memory device is described which stores data in memory cells as a charge on a capacitor. The memory cells have a common cell plate and can be selectively connected to a digit line. Sensing circuitry, including both p-sense and n-sense amplifiers, is connected to the digit line and the cell plate. Equalization circuitry is described to equalize the cell plate and digit line for sensing data stored on a memory cell. Isolation circuitry is described for selectively isolating the sensing circuitry from the memory cells.
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