| 摘要 |
PURPOSE: To improve the overlapping accuracy of the pattern of a critical layer and that of a middle layer when exposing a substrate where the critical layer and the middle layer are mixed in mix and match system to light. CONSTITUTION: Shot regions SB1, SB2,..., SBN of a middle layer on a critical layer on a wafer W are exposed to light. The shot regions of each four critical layers are included in each shot region SBn. With the four shot regions SBa-SBd as measurement target, the amount of position deviation between the vernier mark of the critical layer and that of the middle layer is measured at measurement points 32A-32D which are mutually located within the shot regions SBa- SBd, and the compensation value of a coordinate conversion parameter when aligning the middle layer is obtained from the measurement result. |
