| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a thin film transistor, wherein the level of an off-leakage current is low and the level of an on-state current is high. SOLUTION: In a TFT 10, a gate electrode 19 and a channel region 15 are respectively divided into a plurality of gate electrodes 19 and a plurality of channel regions 15 in the channel length direction, and at the same time, a first low-concentration intermediate region 111 and a second high-concentration intermediate region 112 are formed between the divided channel regions 15, and a drain low-concentration region 162 is made to adjoin the second channel region 152 positioned closest to the side of a drain region 17 during the divided channel regions 15.</p> |
