| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an active matrix type display device having a pixel structure in which the arrangement of a pixel electrode, a gate wiring and a source wiring which are formed in a pixel part is made suitable and also a high apperture ratio is realized without increasing the number of masks and the number of processes. SOLUTION: This semiconductor device has a gate electrode and a source wiring on an insulated surface, a first insulating layer on the gate electrode and the source wiring, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer, a gate wiring which is connected to the gate electrode on the second insulating layer, a connection electrode connecting the source wiring and the semiconductor layer and a pixel electrode which is connected to the semiconductor layer.</p> |
