| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain desired operating characteristics by preventing leakage of borons into a channel region in a MISFET, using a p-type conductive silicon gate electrode. SOLUTION: P ions are implanted in an amorphous silicon film, to form an n-type conductive amorphous silicon film 9n. Then, B ions are implanted in the n-type conductive amorphous silicon film 9n, to convert than into a p-type conductive amorphous silicon film 9p, which is then crystallized. The gate electrode of the MISFET is constructed, using the p-type conductive polycrystalline silicon film implanted with P and B ions.</p> |
