发明名称 |
METHOD OF FORMING A SILICON OXYNITRIDE LAYER |
摘要 |
A SiO<SUB>x</SUB>N<SUB>y </SUB>gate dielectric and a method for forming a SiO<SUB>x</SUB>N<SUB>y </SUB>gate dielectric by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH<SUB>3 </SUB>and then exposing the structure to a plasma comprising a nitrogen source are provided. In one aspect, the structure is annealed after it is exposed to a plasma comprising a nitrogen source. In another aspect, a SiO<SUB>x</SUB>N<SUB>y </SUB>gate dielectric is formed in an integrated processing system by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH<SUB>3 </SUB>in one chamber of the integrated processing system and then exposing the structure to a plasma comprising a nitrogen source in another chamber of the integrated processing system.
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申请公布号 |
US2007087583(A1) |
申请公布日期 |
2007.04.19 |
申请号 |
US20060612276 |
申请日期 |
2006.12.18 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
OLSEN CHRISTOPHER;NOURI FARAN;CHUA THAI C. |
分类号 |
H01L21/31;H01L21/28;H01L21/314;H01L29/51 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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