| 摘要 |
PROBLEM TO BE SOLVED: To reduce ON-resistance in a semiconductor device having a hetero-junction. SOLUTION: The device is configured so that the distance between a contact point (c) and a three overlapping point (a) may be smaller than the thickness of a gate insulating film 4. In the point (a), a drain region 2, a hetero-semiconductor region 3, and the gate electrode film 4 contact with each other. In the point (c), a normal line led from a gate electrode shortest point (b) where the distance between the point (a) and a gate electrode 5 is the shortest to a junction surface between the gate insulating film 4 and the drain region 2 contacts a junction surface. COPYRIGHT: (C)2007,JPO&INPIT
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