发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a structure of a light emitting element superior in light emission efficiency to a top surface. SOLUTION: A structure where two electrodes are arranged in a direction parallel to a surface of a substrate with a light emitting layer interposed therebetween is provided. An electrode is not disposed below the light emitting layer. Therefore, by providing a reflective film below the light emitting layer, light emission efficiency to a top surface can be improved. For example, a film with a reflective index lower than that of the light emitting layer is provided, and light toward the lower side of the light emitting layer is reflected at an interface of the stack where the refractive index has a gap, whereby light emission efficiency to the top surface can be improved. In addition, a metal film with a high reflectance (a reflective metal film with a fixed potential or in a floating state) can be disposed below the light emitting layer. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007242594(A) 申请公布日期 2007.09.20
申请号 JP20070016136 申请日期 2007.01.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HONDA TATSUYA
分类号 H05B33/26;H05B33/10;H05B33/22 主分类号 H05B33/26
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