发明名称 SEMICONDUCTOR MEMORY DEVICE AND ITS OPERATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a novel method for operating a semiconductor memory device. SOLUTION: The method for operating the semiconductor memory device includes the step of comparing the active section of an input signal with the active section of an internally generated first comparison pulse, the step of selecting a first internal operation if the active section of the input signal is shorter than the active section of the first comparison pulse, and the step of selecting a second internal operation if the active section of the input signal is longer than the active section of the first comparison pulse. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007242236(A) 申请公布日期 2007.09.20
申请号 JP20070153376 申请日期 2007.06.08
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHO JEONG-HYEON;KIN HEICHURU
分类号 G11C11/401;G11C11/407;G11C7/00;G11C7/10;G11C7/22;G11C11/4074;G11C11/4076;H03K3/037 主分类号 G11C11/401
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