| 摘要 |
A method for preparing a semiconductor device is provided to suppress the bad effect of a siloxane component of low molecular weight, thereby improving the confidence of wire bonding process. A method for preparing a semiconductor device comprises the steps of coating a heat curing silicone-based dye bonding material on a substrate; arranging a semiconductor device on the coated surface of the substrate; heating the heat curing silicone-based dye bonding material to cure it; removing the siloxane component of low molecular weight adhered on the semiconductor device; and wire bonding it. Preferably the siloxane component of low molecular weight is removed by washing the semiconductor device with a solvent or by plasma treating the semiconductor device. |
