Semiconductor element comprises semiconductor body with drift section structure, where trench structure that has trench walls and trench body, is filled with vertically aligned semiconductor material

摘要

The semiconductor element (1) has a semiconductor body (2) with a drift section structure (3). A trench structure (4) that has trench walls (5,6) and trench body, is filled with a vertically aligned semiconductor material (17). A dopant zone that has a complementary conductivity type drift structure (8) for conducting of the drift structure, is arranged at the trench walls. The semiconductor body is made of silicon. Independent claims are also included for the following: (1) a method for manufacturing a semiconductor chip for a semiconductor element (2) a method for manufacturing multiple semiconductor elements.