| 摘要 |
The invention relates to an electromigration analysis method and a system for analyzing one or more nets in a digital integrated circuit design that are at risk of electromigration. The method comprises the steps of providing at least one interconnect between a driver cell and at least one load cell; applying same extracted netlist data for noise and/or timing analysis and for electromigration analysis; modeling the driver cell by a train of trapezoidal voltage pulses transmitted from the driver cell to the one or more load cells through the at least one interconnect; extracting at least a slew rate of a driver voltage signal (UD) and/or timing information from a noise and/or timing analysis for the one or more nets; and comparing a locally measured current density (if,rms,R32) in the at least one interconnect to an effective local maximum current density limit (irms,max) of the at least one interconnect.
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