| 发明名称 |
Thin film forming method and thin film forming device |
| 摘要 |
The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one, plural times, a pretreatment process is performed in which the source gasses are simultaneously supplied to shorten an incubation period and improve throughput.
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| 申请公布号 |
US7482283(B2) |
申请公布日期 |
2009.01.27 |
| 申请号 |
US20030450161 |
申请日期 |
2003.06.11 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YAMASAKI HIDEAKI;KAWANO YUMIKO |
| 分类号 |
H01L21/44;C23C16/02;C23C16/34;C23C16/44;C23C16/455;C23C16/52;H01J37/32;H01L21/285;H01L21/31;H01L21/469 |
主分类号 |
H01L21/44 |
| 代理机构 |
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