发明名称 |
Semiconductor device having deep trench charge compensation regions and method |
摘要 |
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers.
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申请公布号 |
US7482220(B2) |
申请公布日期 |
2009.01.27 |
申请号 |
US20060582889 |
申请日期 |
2006.10.19 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. |
发明人 |
LOECHELT GARY H.;PARSEY, JR. JOHN M.;ZDEBEL PETER J.;GRIVNA GORDON M. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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