Semiconductor device and method of manufacturing the same

摘要

An exemplary method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a gate insulation layer on a semiconductor substrate; forming a plurality of gate electrodes on the gate insulation layer; forming pocket regions by a pocket ion implantation process using the gate electrode as an implantation mask; forming a capping electrode layer on the gate electrode by depositing a polysilicon layer; forming lightly doped regions by low-concentration ion implantation using the capping electrode layer as an implantation mask; forming spacer layers on the sidewall of the capping electrode layer; and forming source and drain regions by high concentration ion implantation using the spacer layers as an implantation mask. The method can suppress the occurrence of the punch-through phenomenon.