| 发明名称 |
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE |
| 摘要 |
A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure. The method includes forming a gate material layer in the trench. The method includes forming a planarization layer over the gate material layer. The planarization layer includes a first material that is different from a second material of the gate material layer and a third material of the dielectric layer. The method includes performing an etching process to remove the planarization layer and a first upper portion of the gate material layer so as to form a gate in the trench. |
| 申请公布号 |
US2016190013(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514625291 |
申请日期 |
2015.02.18 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
CHANG Chai-Wei;WU Po-Chi;FANG Wen-Han |
| 分类号 |
H01L21/8234;H01L21/321;H01L21/02;H01L21/28;H01L21/311 |
主分类号 |
H01L21/8234 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device structure, comprising:
forming a dielectric layer over a substrate, wherein the substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure; forming a gate material layer in the trench; forming a planarization layer over the gate material layer, wherein the planarization layer comprises a first material that is different from a second material of the gate material layer and a third material of the dielectric layer; and performing an etching process to remove the planarization layer and a first upper portion of the gate material layer so as to form a gate in the trench. |
| 地址 |
Hsin-Chu TW |
