FinFET semiconductor device with isolated fins made of alternative channel materials

摘要

One illustrative method disclosed herein includes, among other things, oxidizing a lower portion of an initial fin structure to thereby define an isolation region that vertically separates an upper portion of the initial fin structure from a semiconducting substrate, performing a recess etching process to remove a portion of the upper portion of the initial fin structure so as to define a recessed fin portion, forming a replacement fin on the recessed fin portion so as to define a final fin structure comprised of the replacement fin and the recessed fin portion, and forming a gate structure around at least a portion of the replacement fin.

主权项

1. A FinFET device, comprising:
a semiconducting substrate; a fin structure vertically separated from said substrate, said fin structure comprising an upper fin portion and a bottom fin portion, wherein said bottom fin portion is comprised of the substrate material and said upper fin portion is comprised of a semiconducting material that is different than said substrate material; an isolation region positioned below said bottom fin portion that vertically separates said fin structure from said semiconducting substrate; and a gate structure around at least a portion of said upper fin portion.