Semiconductor device

摘要

A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also includes first contact and a second contact. The average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact.

主权项

1. A semiconductor device comprising:
a semiconductor substrate including an AlGaN layer on a GaN layer; a source; a drain; and a gate, which together define a source-gate side and a drain-gate side; wherein the average thickness of the AlGaN layer varies between the source and the drain, for modulating the density of an electron gas in the GaN layer between the source and the drain; wherein at least part of an upper surface of the AlGaN layer includes grooves in a grid that defines a grid pattern; wherein the AlGaN layer has a larger average thickness between the source and the gate than between the gate and the drain.