Memory device with different memory film diameters in the same laminate level

摘要

According to one embodiment, a non-volatile memory device includes first electrodes, at least one first semiconductor layer, a first memory film, second electrodes, at least one second semiconductor layer, and a second memory film. The first electrodes are stacked in a first direction. The one first semiconductor layer extends in the first direction through the first electrodes. The first memory film is provided between each of the first electrodes and the one first semiconductor layer. The second electrodes are stacked in the first direction and provided together with the first electrodes in a second direction orthogonal to the first direction. The one second semiconductor layer extends in the first direction through the second electrodes. The second memory film is provided between each of the second electrodes and the one second semiconductor layer. An outer diameter of the first memory film is larger than that of the second memory film.

主权项

1. A non-volatile memory device comprising:
a plurality of first electrodes stacked in a first direction; at least one first semiconductor layer extending in the first direction through the first electrodes; a first memory film provided between each of the first electrodes and the first semiconductor layer; a plurality of second electrodes stacked in the first direction and provided together with the first electrodes in a second direction orthogonal to the first direction; at least one second semiconductor layer extending in the first direction through the second electrodes; and a second memory film provided between each of the second electrodes and the second semiconductor layer, an outer diameter of the first memory film provided between one of the first electrodes and the first semiconductor layer being larger than an outer diameter of the second memory film provided between one of the second electrodes positioned in the same laminate level as the one of the first electrodes and the second semiconductor layer.