| 摘要 |
<p>PURPOSE:To manufacture high-purity Zr by a simplified process by refining zirconium halide from the scrap of zircaloy by a halide decomposition process, decomposing the above, and the depositing the resulting high-purity Zr on the surface of a Zr material. CONSTITUTION:The scrap 23 of zircaloy containing Sn, etc., iodine 24, etc., as halogen are charged into a refining tank 11. Both are heated and allowed to react to form SnI4, etc., and ZnI4, and then, SnI4 is trapped and recovered in a recovering tank 13 having temp. difference. On the other hand, refined ZnI4 is fed to a zirconium iodide supply tank 16. The inside of a decomposition tank 17 is evacuated, and this decomposition tank 17 is heated by means of an electric furnace 18 up to a temp. at which the vapor pressure of ZrI4 can be held at the prescribed value, and further, a filament 19 consisting of high- purity Zr is electrified to undergo heating by means of an electric power source 20. Then, ZrI4 in a vapor-phase state in the supply tank 16 is slowly supplied into the decomposition tank 17 and ZrI4 is dissociated above the filament 19, by which high-purity Zr can be grown on the filament 19.</p> |
