IMPROVED METHOD AND APPARATUS FOR MICROWAVE TRANSIENT SPECTROSCOPY OF DEEP LEVELS IN SEMICONDUCTORS

摘要

Method and apparatus for microwave transient spectroscopy of deep levels in semiconductors, in which a sample (14) of the semiconductor material is placed in the field of a microwave resonator (13) and terminals of a junction in the sample are excited by a pulse generator (20). The reactive component of the loading impedance caused by the presence of the sample in the field of the resonator (13) causes periodic shifting of the resonance curve of the resonator along the frequency axis. The resonator (13) is excited by a microwave generator (12) slightly off tuned to the resonance frequency of the resonator so that the microwave energy in the resonator get amplitude modulated by said changes in said reactive component. A detector (16) senses such changes in amplitude and these changes represent transient properties of deep levels in the sample.